IXFH21N50 IXYS SEMICONDUCTOR, IXFH21N50 Datasheet - Page 3

• Manufacturer Part Number: IXFH21N50
• Description: N CH MOSFET, 500V, 21A, TO-247AD
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH21N50

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
45
40
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
-50
0
0
T
T
26N50
24N50
21N50
J
5
J
-25
= 25°C
= 25°C
Fig. 1 Output Characteristics
5
Fig. 3 R
Fig. 5 Drain Current vs.
Case Temperature
10 15 20 25 30 35 40 45 50
V
0
GS
10
= 10V
T
DS(on)
25
I
C
7V
D
V
- Degrees C
15
V
- Amperes
DS
GS
vs. Drain Current
50
- Volts
= 10V
20
75
V
GS
= 15V
25
100 125 150
6V
30
5V
35
IXFH21N50
IXFM21N50
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
45
40
35
30
25
20
15
10
5
0
-50
-50
0
1
-25
-25
T
V
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
J
V
DS
of Drain to Source Resistance
= 25°C
GS(th)
= 10V
2
0
0
IXFM24N50
IXFH24N50
IXFT24N50
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
= 12A
- Volts
50
50
5
6
75
75
7
100 125 150
100 125 150
BV
8
DSS
IXFM26N50
IXFH26N50
IXFT26N50
9
10