IXFH21N50 IXYS SEMICONDUCTOR, IXFH21N50 Datasheet - Page 4

• Manufacturer Part Number: IXFH21N50
• Description: N CH MOSFET, 500V, 21A, TO-247AD
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH21N50

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
D=0.05
D=0.02
D=0.01
D=0.5
D=0.2
D=0.1
Single pulse
25
V
I
I
D
G
DS
5
= 12.5A
= 10mA
Gate Charge - nCoulombs
= 250V
50
75
0.0001
10
V
f = 1 Mhz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
15
20
0.001
C
C
C
iss
oss
rss
25
IXFH21N50
IXFM21N50
Time - Seconds
0.01
4,835,592
4,850,072
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source to Drain Voltage
100
0.1
10
50
45
40
35
30
25
20
15
10
1
5
0
4,881,106
4,931,844
0.00
1
Limited by R
0.1
0.25
IXFM24N50
IXFH24N50
IXFT24N50
5,017,508
5,034,796
T
DS(on)
J
0.50
= 125°C
10
V
V
DS
SD
5,049,961
5,063,307
0.75
- Volts
- Volt
1
T
J
= 25°C
1.00
5,187,117
5,237,481
100
IXFM26N50
IXFH26N50
IXFT26N50
1.25
5,486,715
5,381,025
1.50
500
10
10µs
100µs
1ms
10ms
100ms