IXFN180N10 IXYS SEMICONDUCTOR, IXFN180N10 Datasheet

IXFN180N10

Manufacturer Part Number

IXFN180N10

Description

N CH MOSFET, 100V, 180A, SOT-227B

Manufacturer

IXYS SEMICONDUCTOR

Datasheet

1.IXFN180N10.pdf (4 pages)

Specifications of IXFN180N10

Transistor Polarity

N Channel

Continuous Drain Current Id

180A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

8mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN180N10

Manufacturer:

IXYS

Quantity:

240

Company:

BOSTOCK HK LIMITED

Part Number:

IXFN180N10

Manufacturer:

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

IXFN180N10

Quantity:

128

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HiPerFET

Power MOSFET

Single MOSFET Die

Preliminary data sheet

Symbol Test Conditions

dv/dt

Weight

Symbol

D25

L(RMS)

GSS

DSS

stg

DGR

GSM

ISOL

DSS

GS(th)

DS(on)

= 25 C, unless otherwise specified)

Continuous

Transient

Terminal (current limit)

1.6 mm (0.063 in) from case for 10 s

50/60 Hz, RMS

Mounting torque

Terminal connection torque

Note 2

ISOL

= 25 C

= V

= 25°C to 150°C

= 25°C to 150°C, R

= 25 C;

= 25 C

= 0 V, I

= 20V, V

= 0 V

= V

= 10V, I

Test Conditions

150 C, R

1 mA

DSS

, di/dt 100 A/ s, V

, I

= 3mA

= 8mA

= 0.5 • I

Note 1

= 0V

= 2

t = 1 min

t = 1 s

D25

= 1M

DSS

= 25 C

= 125 C

Min.

100

IXFN 180N10

Characteristic Values

Typ.

-55 ... +150

Maximum Ratings

150

1.5/13 Nm/lb.in.

2500

3000

100

180

100

720

180

300

600

Max.

100

V/ns

miniBLOC, SOT-227 B (IXFN)

Features

Applications

Advantages

G = Gate

S = Source

D25

International standard package

Encapsulating epoxy meets

UL 94 V-0, flammability classification

miniBLOC with Aluminium nitride

isolation

Low R

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Low voltage relays

Easy to mount

Space savings

High power density

DSS

DS(on)

E153432

250 ns

DS (on)

= 100

= 180

HDMOS

D = Drain

8 m

process

98546B (8/99)

Related parts for IXFN180N10

IXFN180N10 Summary of contents

Page 1

TM HiPerFET Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150° DGR Continuous GS V Transient GSM I ...

Page 2

Symbol Test Conditions ( unless otherwise specified 60A, Note iss MHz oss ...

Page 3

Figure 1. Output Characteristics at 25 200 V =10V 150 100 50 0 0.0 0.5 1 Volts DS Figure 3. R normalized to 15A/25 DS(on) 1 10V GS ...

Page 4

Figure 7. Gate Charge 15 V =50V =90A D I =10mA 100 150 200 250 300 350 400 Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic ...

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