SUM110N08-07-T1-E3 Vishay, SUM110N08-07-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM110N08-07-T1-E3
• Description: N CHANNEL MOSFET, 75V, 85A
• Manufacturer: Vishay

Specifications of SUM110N08-07-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUM110N08-07
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
D(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
GSS
I
DSS
Q
g
Q
I
SM
t
oss
t
t
SD
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
C
= 25 °C)
New Product
V
V
V
I
V
V
D
V
DS
DS
DS
GS
GS
GS
≅ 85 A, V
I
= 75 V, V
= 75 V, V
= 35 V, V
= 10 V, I
= 10 V, I
F
V
V
b
V
= 0 V, V
V
V
V
I
= 85 A, di/dt = 100 A/µs
DS
V
V
DS
DS
DD
F
DS
DS
GS
DS
= 110 A, V
Test Condition
= 0 V, V
= ≥ 5 V, V
= V
= 0 V, I
= 35 V, R
= 75 V, V
= 10 V, I
= 15 V, I
GEN
D
D
GS
GS
DS
GS
GS
= 30 A, T
= 30 A, T
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
D
GS
D
= 250 µA
GS
D
D
GS
GS
L
= 250 µA
= ± 20 V
= 30 A
= 30 A
= 0.4 Ω
= 10 V
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 175 °C
g
= 175 °C
= 125 °C
= 110 A
= 2.5 Ω
Min
120
2.5
75
30
0.0055
5250
0.13
Typ
700
310
100
1.0
3.5
90
24
27
20
45
75
75
S-60418–Rev. E, 20-Mar-06
Document Number: 71829
± 100
0.007
0.013
0.017
Max
0.30
250
165
150
115
110
350
120
4.0
1.5
50
30
70
1
7
Unit
nA
µA
nC
µC
pF
ns
ns
V
A
Ω
S
A
V
A