SUM110N08-07-T1-E3 Vishay, SUM110N08-07-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N08-07-T1-E3
• Description: N CHANNEL MOSFET, 75V, 85A
• Manufacturer: Vishay

Specifications of SUM110N08-07-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS T
Document Number: 71829
S-60418–Rev. E, 20-Mar-06
8000
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
200
160
120
50
80
40
0
0
0
0
0
0
15
V
15
2
C
V
DS
rss
DS
Output Characteristics
T
– Drain-to-Source Voltage (V)
Transconductance
– Drain-to-Source Voltage (V)
C
I
D
30
= - 55 °C
– Drain Current (A)
Capacitance
4
30
V
C
45
C
GS
oss
iss
= 10 thru 6 V
6
45
60
A
= 25 °C, unless otherwise noted
5 V
60
8
75
125 °C
25 °C
New Product
10
90
75
0.010
0.008
0.006
0.004
0.002
0.000
200
160
120
20
16
12
80
40
8
4
0
0
0
0
0
V
I
D
DS
= 85 A
20
On-Resistance vs. Drain Current
30
= 35 V
1
V
GS
Transfer Characteristics
Q
g
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
40
60
2
– Drain Current (A)
Gate Charge
SUM110N08-07
T
60
90
Vishay Siliconix
C
3
25 °C
= 125 °C
120
80
4
www.vishay.com
V
GS
150
100
- 55 °C
= 10 V
5
180
120
6
3