SUM110N08-07-T1-E3 Vishay, SUM110N08-07-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N08-07-T1-E3
• Description: N CHANNEL MOSFET, 75V, 85A
• Manufacturer: Vishay

Specifications of SUM110N08-07-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUM110N08-07
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
1000
2.5
2.0
1.5
1.0
0.5
0.0
100
0.00001
0.1
10
- 50
1
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
I
= 30 A
AV
0.0001
= 10 V
(A) at T
Avalanche Current vs. Time
T
0
J
– Junction Temperature (°C)
A
25
= 150 °C
0.001
50
t
in
I
AV
(Sec)
75
(A) at T
0.01
100
A
A
= 25 °C
= 25 °C, unless otherwise noted
125
0.1
150
New Product
175
1
100
100
10
94
88
82
76
70
1
- 50
0
- 25
I
Source-Drain Diode Forward Voltage
D
= 250 µA
V
Drain Source Breakdown vs.
SD
T
0
T
J
0.3
J
Junction Temperature
– Junction Temperature (°C)
– Source-to-Drain Voltage (V)
= 150 °C
25
50
S-60418–Rev. E, 20-Mar-06
0.6
Document Number: 71829
75
100
T
J
= 25 °C
125
0.9
150
175
1.2