SUM110N08-07-T1-E3 Vishay, SUM110N08-07-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N08-07-T1-E3
• Description: N CHANNEL MOSFET, 75V, 85A
• Manufacturer: Vishay

Specifications of SUM110N08-07-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 71829
S-60418–Rev. E, 20-Mar-06
http://www.vishay.com/ppg?71829.
120
100
80
60
40
20
0
0.01
0
0.1
1
10
Maximum Avalanche and Drain Current
–4
25
Duty Cycle = 0.5
0.1
0.2
T
C
Single Pulse
vs. Case Temperature
50
– Ambient Temperature (°C)
0.02
75
0.05
100
Normalized Thermal Transient Impedance, Junction-to-Case
10
125
A
–3
= 25 °C, unless otherwise noted
150
New Product
Square Wave Pulse Duration (sec)
175
10
–2
1000
100
0.1
10
1
0.1
by r
Limited
V
DS(on)
DS
Single Pulse
T
– Drain-to-Source Voltage (V)
C
Safe Operating Area
1
= 25 °C
10
–1
SUM110N08-07
Vishay Siliconix
10
www.vishay.com
100
10 µs
1 ms
10 ms
100 ms
dc
100 µs
1
5