BFS17P Infineon Technologies, BFS17P Datasheet - Page 4

• Manufacturer Part Number: BFS17P
• Description: RF TRANSISTOR, NPN, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFS17P

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 15V
• Gain Bandwidth Ft Typ: 2.5GHz
• Power Dissipation Pd: 280mW
• Dc Collector Current: 25mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 70
• Rohs Compliant: Yes
• Packages: SOT23
• Vceo (max): 15.0 V
• Ic(max): 25.0 mA
• Nfmin (typ): 3.5 dB
• Gmax (typ): -
• Oip3: 21.5 dBm

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
320
240
200
160
120
80
40
-
0
2
1
0
10
0
/P
-7
totDC
15
10
30
-6
= ƒ(t
10
45
-5
p
60
)
10
-4
75
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
90 105 120
tot
-3
= ƒ(T
10
-2
S
)
T
t
°C
s
p
S
150
10
0
4
Permissible Pulse Load R
Collector-base capacitance C
Emitter-base capacitance C
f = 1 MHz
K/W
10
10
10
pF
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
3
2
1
10
0
-7
2
CCB
10
-6
4
10
CEB
6
-5
8
10
-4
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
12
thJS
-3
eb
14
10
cb
2005-11-17
= ƒ(t
= ƒ(V
-2
BFS17P
= ƒ(V
16
t
V
s
p
EB
p
V
CB
)
CB
)
, V
10
20
)
EB
0