PMEG3020CPA NXP Semiconductors, PMEG3020CPA Datasheet - Page 5

• Manufacturer Part Number: PMEG3020CPA
• Description: DIODE,DUAL,SCHOTTKY,30V,2A,SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PMEG3020CPA

• Diode Configuration: Common Cathode
• Diode Type: Schottky
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 440mV
• Reverse Recovery Time Trr Max: 50ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
PMEG3020CPA
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
1
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
duty cycle =
0.25
0.5
0.1
1
0
0.75
0.33
0.05
0.02
0.01
0.2
Table 7.
T
[1]
2
Symbol
Per diode
V
I
C
t
10
R
rr
O
j
F
d
= 25
3
−2
, standard footprint
When switched from I
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
All information provided in this document is subject to legal disclaimers.
10
−1
F
= 10 mA to I
Rev. 1 — 24 August 2010
R
1
= 10 mA; R
I
V
f = 1 MHz
Conditions
I
I
V
F
F
F
R
R
= 100 mA
= 1 A
= 2 A
V
V
= 10 V
= 30 V
R
R
2 A low V
= 1 V
= 10 V
L
= 100 Ω; measured at I
10
F
dual MEGA Schottky barrier rectifier
[1]
PMEG3020CPA
Min
-
-
-
-
-
-
-
-
10
R
= 1 mA.
2
Typ
220
335
410
120
485
170
60
50
t
p
© NXP B.V. 2010. All rights reserved.
(s)
006aac417
Max
-
370
440
-
2000
-
-
-
10
3
Unit
mV
mV
mV
μA
μA
pF
pF
ns
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