PMEG3020CPA NXP Semiconductors, PMEG3020CPA Datasheet - Page 9

• Manufacturer Part Number: PMEG3020CPA
• Description: DIODE,DUAL,SCHOTTKY,30V,2A,SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PMEG3020CPA

• Diode Configuration: Common Cathode
• Diode Type: Schottky
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 440mV
• Reverse Recovery Time Trr Max: 50ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
PMEG3020CPA
Product data sheet
Fig 13. Reverse recovery time test circuit and waveforms
V = V
(1) I
R
S
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
8.1 Quality information
The current ratings for the typical waveforms as shown in
calculated according to the equations:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
I
Fig 14. Duty cycle definition
RMS
I
F
=
D.U.T.
I
F AV
(
)
at DC, and
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
mga881
SAMPLING
R
i
= 50
Rev. 1 — 24 August 2010
Ω
I
RMS
V
P
R
=
I
M
t
10 %
r
t
×
1
2 A low V
I
90 %
F AV
(
δ
input signal
t
2
with I
)
t
duty cycle δ =
p
=
I
F
RMS
M
dual MEGA Schottky barrier rectifier
006aaa812
×
δ
defined as RMS current.
with I
t
t
t
1
2
PMEG3020CPA
Figure
t
M
defined as peak current,
+ I
F
9, 10,
output signal
© NXP B.V. 2010. All rights reserved.
11
and
t rr
12
(1)
are
t
9 of 15