HT1MO2S3E3M-T NXP Semiconductors, HT1MO2S3E3M-T Datasheet - Page 4

• Manufacturer Part Number: HT1MO2S3E3M-T
• Description: RFID Modules & Development Tools HITAG 1 MOA2 MODULE
• Manufacturer: NXP Semiconductors

Specifications of HT1MO2S3E3M-T

• Operating Current: 30 mA
• Operating Voltage: 3.1 V to 4.2 V
• Product: RFID Transponders
• Wireless Frequency: 125 KHz
• Dimensions: 7.55 mm x 11.75 mm x 0.45 mm
• Operating Temperature Range: - 25 C to + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HT1MOA2S30/E/3,118

2 Specifications
2.1 Mechanical Properties
Width
(Proposed Punching Outline)
Length
(Proposed Punching Outline)
Overall Thickness
Film Thickness
Bondpad Size for
Transponder Coil / Module
Interconnection
2.2 Materials
Tape
Copper Plating
Bond Plating
Backside Plating
Glob Top
2.3 Temperature Range
Operating
Processing
Welding Parameters
Soldering Parameters
Ht1moa3.doc/HS
Specifications of the HT1 MOA3 S30
max. 25 ms @ 500 °C
7.55 mm
11.75 mm
0.45 mm ± 0.03 mm
0.16 mm ± 0.005 mm
1.9 x 3.5 mm
110 µm
35 µm
Ni / Au
Ni / Au
Filled Epoxy
-25°C to +85°C
150°C for 30 minutes
max. 3 s @ 390 °C
Page 4 of 24
Rev. 1.1
see also drawing in chapter 3
Suitable for Welding/Soldering/
Conductive Gluing
Glass epoxy
Thermal curing
ED copper
Suitable for Al and Au wire
bonding
For packed transponder,
depending on type of package
at a standard lamination
pressure for contactless smart
card plastic materials (e.g. PVC,
PET, ...)
on bond pads
on bond pads
1997-08-19