RN4990(T5L,F,T) Toshiba, RN4990(T5L,F,T) Datasheet
RN4990(T5L,F,T)
Specifications of RN4990(T5L,F,T)
Related parts for RN4990(T5L,F,T)
RN4990(T5L,F,T) Summary of contents
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... Equivalent Circuit and Bias Resister Values (Ta = 25° ° ° ° Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Ta = 25° ° ° ° Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TOSHIBA Transistor RN4990 Symbol Rating Unit CBO CEO V 5 ...
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Q1, Q2 Common Maximum Ratings (Ta = 25° ° ° ° C) Characteristic Collector power dissipation Junction temperature Storage temperature range * : Total rating Marking Equivalent Circuit (Top View) Symbol Rating Unit P 200 °C T ...
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Q1 Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Q2 Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector ...
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RN4990 2001-06-07 ...
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RN4990 2001-06-07 ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...