RN4985(T5L,F,T) Toshiba, RN4985(T5L,F,T) Datasheet

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RN4985(T5L,F,T)

Manufacturer Part Number
RN4985(T5L,F,T)
Description
Digital Transistors 100mA 50volts 6Pin 2.2K x 47Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN4985(T5L,F,T)

Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
US-6
Continuous Collector Current
100 mA , - 100 mA
Power Dissipation
200 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
Q1 Maximum Ratings
Q2 Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Characteristic
Characteristic
(Ta = 25° ° ° ° C)
(Ta = 25° ° ° ° C)
Symbol
Symbol
V
V
V
V
V
V
CBO
CEO
EBO
CBO
CEO
EBO
I
I
C
C
RN4985
TOSHIBA Transistor
Rating
Rating
−100
100
−50
−50
R1: 2.2kΩ
R2: 47kΩ
(Q1, Q2 Common)
−5
50
50
5
1
Unit
Unit
mA
mA
V
V
V
V
V
V
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
2001-06-07
RN4985
Unit: mm

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RN4985(T5L,F,T) Summary of contents

Page 1

... Q1 Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Ta = 25° ° ° ° Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TOSHIBA Transistor RN4985 R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common) Symbol Rating Unit CBO V 50 ...

Page 2

Q1, Q2 Common Maximum Ratings Characteristic Collector power dissipation Junction temperature Storage temperature range * Total rating Marking Equivalent Circuit (Top View) (Ta = 25° ° ° ° C) Symbol Rating Unit P 200 °C T 150 ...

Page 3

Q1 Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Q2 Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain ...

Page 4

Q1 4 RN4985 2001-06-07 ...

Page 5

Q2 5 RN4985 2001-06-07 ...

Page 6

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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