J111,126 NXP Semiconductors, J111,126 Datasheet - Page 2

• Manufacturer Part Number: J111,126
• Description: TRANSISTOR N-CH 40V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J111,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 6pF @ 10V (VGS)
• Resistance - Rds(on): 30 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 3 V
• Gate-source Breakdown Voltage: 40 V
• Drain Current (idss At Vgs=0): 20 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5810-2; J111,126

Philips Semiconductors
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
PINNING
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
July 1993
1 = gate
2 = source
3 = drain
Drain-source voltage
Drain current
Total power dissipation
Gate-source cut-off voltage
Drain-source on-state resistance
High speed switching
Interchangeability of drain and
source connections
Low R
N-channel silicon field-effect transistors
V
up to T
V
V
DS
DS
DS
= 15 V; V
= 5 V; I
= 0.1 V; V
DS on
amb
at zero gate voltage
= 50 C
D
= 1 A
GS
GS
= 0
= 0
I
P
R
DSS
handbook, halfpage
V
V
tot
DS on
DS
GS off
Fig.1 Simplified outline and symbol, TO-92.
2
1
2
3
max.
min.
max.
min.
max.
max.
J111
400
40
20
30
10
3
MAM042
J112
J111; J112; J113
400
g
40
50
5
5
1
Product specification
J113
400
100
0.5
d
s
40
2
3
V
mA
mW
V
V