J111,126 NXP Semiconductors, J111,126 Datasheet - Page 4

• Manufacturer Part Number: J111,126
• Description: TRANSISTOR N-CH 40V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J111,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 6pF @ 10V (VGS)
• Resistance - Rds(on): 30 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 3 V
• Gate-source Breakdown Voltage: 40 V
• Drain Current (idss At Vgs=0): 20 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5810-2; J111,126

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Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
July 1993
Input capacitance
Feedback capacitance
Switching times
Rise time
Turn-on time
Fall time
Turn-off time
V DD
j
= 25 C unless otherwise specified
N-channel silicon field-effect transistors
V
V
test conditions
V
V
V
V
V
DS
DS
DD
DS
GS off
GS off
GS off
Fig.2 Switching times test circuit.
= 0; V
= 0; V
= 10 V; V
= V
10 nF
= 12 V; R
= 7 V; R
= 5 V; R
GS
GS
GS
= 0; f = 1 MHz
GS
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
50
10 F
= 0 to V
50
L
L
L
=
= 1550
= 3150
750
GSoff
DUT
R L
1 F
for J111
for J112
for J113
SAMPLING
SCOPE
50
MBK289
V i
V o
V GS = 0 V
V GS off
4
10%
90%
90%
10%
Fig.3 Input and output waveforms.
C
C
C
t
t
t
t
r
on
f
off
is
is
rs
t off
t f
typ.
typ.
max.
typ.
typ.
typ.
typ.
typ.
J111; J112; J113
Product specification
t on
22 pF
28 pF
13 ns
15 ns
35 ns
6 pF
3 pF
6 ns
t r
MBK288