MBR3045PT Taiwan Semiconductor, MBR3045PT Datasheet
MBR3045PT
Manufacturer Part Number
MBR3045PT
Description
Schottky (Diodes & Rectifiers) 30 Amp 45 Volt Dual
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR30100PT.pdf
(2 pages)
Specifications of MBR3045PT
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
30 A
Max Surge Current
250 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.76 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR3045PT
Manufacturer:
GI
Quantity:
5 006
Company:
Part Number:
MBR3045PT
Manufacturer:
VISHAY
Quantity:
36
Company:
Part Number:
MBR3045PT
Manufacturer:
ON Semiconductor
Quantity:
42
Part Number:
MBR3045PT
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Part Number:
MBR3045PT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR3045PTG
Manufacturer:
ON Semiconductor
Quantity:
1 938
Part Number:
MBR3045PTG
Manufacturer:
ON/安森美
Quantity:
20 000
Notes:
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(SEE F1G. 1)
Peak Repetitive Forward Current (Rated V
20KHz) at Tc=105
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 2)
Maximum Instantaneous Forward Voltage at (Note 1)
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125
Voltage Rate of Change at (Rated V
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Type Number
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
o
C/10 seconds,0.17”(4.3mm)from case
o
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to case Per Leg
C ambient temperature unless otherwise specified.
o
C
I
I
I
I
F
F
F
F
=15A, Tc=25
=15A, Tc=125
=30A, Tc=25
=30A, Tc=125
@4V/1.0 MHz
o
o
R
C
C
o
o
)
C
C
R
, Square Wave,
@ Tc=25
o
C
o
C
Symbol
dV/dt
R
V
V
T
I
I
I
MBR3035PT - MBR30150PT
V
I
RRM
FRM
FSM
(AV)
V
STG
RRM
RMS
θJC
T
I
Cj
DC
R
- 162 -
F
J
30.0 AMPS. Schottky Barrier Rectifiers
MBR
3035
PT
35
24
35
0.60
0.82
0.72
600
2.0
－
20
Dimensions in inches and (millimeters)
MBR
3045
PT
45
31
45
1.0
TO-3P/TO-247AD
MBR
3050
PT
50
35
50
0.75
0.65
460
-65 to +150
-65 to +175
15
－
－
10,000
MBR
3060
200
1.4
PT
60
42
60
30
30
MBR
3090
PT
90
63
90
1.0
0.85
0.75
－
－
30100
MBR
100
100
320
0.5
PT
70
10
30150
MBR
150
105
150
0.95
0.92
1.02
0.98
PT
Version: C08
Units
o
V/uS
C/W
mA
mA
o
o
pF
V
V
V
A
A
A
A
V
C
C
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MBR3045PT Summary of contents
Page 1
Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, ...
Page 2
... PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 0 Tj=25 C f=1.0MHz Vsig=50mVp-p 10.0 1 0.1 0.01 10 100 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60Hz 0 Tj=25 C MBR3035PT-MBR3045PT MBR3050PT-MBR30150PT 100 120 140 0 PULSE DURATION. (sec) Version: C08 100 100 ...