MBR10100 Taiwan Semiconductor, MBR10100 Datasheet
MBR10100
Manufacturer Part Number
MBR10100
Description
Schottky (Diodes & Rectifiers) 10 Amp 100 Volt Single
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR1035.pdf
(2 pages)
Specifications of MBR10100
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.85 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR10100
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
MBR10100(HJ)
Manufacturer:
华晶
Quantity:
20 000
Part Number:
MBR10100-M3/4W
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR10100CD
Manufacturer:
LITEON
Quantity:
1 666
Part Number:
MBR10100CL-TA3-T
Manufacturer:
UTC/友顺
Quantity:
20 000
Company:
Part Number:
MBR10100CS2TR-E1
Manufacturer:
TI
Quantity:
3 000
Company:
Part Number:
MBR10100CT
Manufacturer:
SIRECT
Quantity:
20 000
Company:
Part Number:
MBR10100CT
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR10100CT
Manufacturer:
LITEON/光宝
Quantity:
20 000
Company:
Part Number:
MBR10100CT-U/P
Manufacturer:
KEC
Quantity:
890
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125
Peak Repetitive Forward Current (Rated V
Square Wave, 20KHz) at Tc=125
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
Maximum Instantaneous Reverse Current
@ Tc =25
@ Tc=125
Voltage Rate of Change (Rated V
Typical Junction Capacitance
M
Operating Junction Temperature Range
Storage Temperature Range
Notes:
Type Number
aximum
Pb
260
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
o
T
o
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
o
o
C at Rated DC Blocking Voltage
ypical
C
C/10 seconds,0.25”(6.35mm)from case
RoHS
RoHS
COMPLIANCE
COMPLIANCE
o
C ambient temperature unless otherwise specified.
T
(Note 2)
hermal Resistance(Note 3)
I
I
I
I
F
F
F
F
=10A, T
=20A, T
=20A, T
=10A, T
C
C
C
C
=125
=25
=125
=25
o
o
R
o
C
C
C
o
o
)
C
C
R
,
Symbol
dV/dt
R
V
V
T
I
I
V
I
I
FRM
RRM
(AV)
FSM
V
STG
RRM
Cj
θJC
T
RMS
DC
I
F
J
R
10.0 AMPS. Schottky Barrier Rectifiers
MBR
1035
35
24
35
0.70
0.57
0.84
0.72
15
1.0
MBR1035 - MBR10200
MBR
1045
45
31
45
Dimensions in inches and (millimeters)
MBR
1050
50
35
50
0.85.
0.80
0.70
0.95
10
-65 to +150
-65 to +175
MBR
TO-220AC
1060
60
42
60
10,000
150
500
0.1
3.0
10
32
MBR
1090
90
63
90
0.85
0.71
－
－
0.5
10100
MBR
100
100
70
6.0
Version: B08
10150
MBR
150
105
150
1.05
－
－
－
10200
MBR
200
140
200
Units
o
V/uS
C/W
mA
mA
pF
o
o
V
V
V
A
A
A
A
V
C
C
Related parts for MBR10100
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
Part Number:
Description:
Manufacturer:
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet:
MBR10100 Summary of contents
Page 1
RoHS RoHS Pb COMPLIANCE COMPLIANCE Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, ...
Page 2
... CASE TEMPERATURE FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 40 0 Tj=125 C 10 Pulse Width=300 s 1% Duty Cycle 1 0 Tj=25 C 0.1 MBR1035-MBR1045 MBR1050-MBR1060 MBR1090-MBR10100 MBR10150-200 0.01 0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 0.6 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 4,000 1,000 100 0 ...