STPS80150CW STMicroelectronics, STPS80150CW Datasheet
STPS80150CW
Specifications of STPS80150CW
497-3221-5
497-3221
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STPS80150CW Summary of contents
Page 1
... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth October 2003 - Ed 150 V 175°C 0.74 V Parameter Tc = 150° Sinusoidal tp = 1µ 25°C STPS80150CW TO-247 Value Unit 150 80 40 Per diode 80 Per device 500 38200 - 175 175 10000 V/µ ...
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... STPS80150CW THERMAL RESISTANCES Symbol R Junction to case th(j-c) R th(j-c) Junction to case When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equation ...
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... Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 10000 1000 100 110 130 150 1 T =25°C j 0.8 0.9 1.0 1.1 1.2 STPS80150CW /R th(j-c) t (s) p 1.E-02 1.E- 100 T tp =tp/T 1.E+00 F=1MHz V =30mV OSC RMS T =25° ...
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... Ordering type Marking STPS80150CW STPS80150CW Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...