STPS80150CW STMicroelectronics, STPS80150CW Datasheet - Page 3

• Manufacturer Part Number: STPS80150CW
• Description: DIODE SCHOTTKY 150V 40A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS80150CW

• Voltage - Forward (vf) (max) @ If: 840mV @ 40A
• Current - Reverse Leakage @ Vr: 30µA @ 150V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 40 A
• Max Surge Current: 500 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.9 V at 80 A
• Maximum Reverse Leakage Current: 30 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 150V
• Forward Current If(av): 80A
• Forward Voltage Vf Max: 960mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3221; 497-3221-5; 497-3221

Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
Fig. 9: Forward voltage drop versus forward
current (per diode).
100.0
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
500
450
400
350
300
250
200
150
100
1.E-01
10.0
50
1.E-03
1.0
0.1
0
I (A)
0.0
M
I
10
FM
I
M
I (µA)
R
(A)
0.1
=0.5
t
30
0.2
(typical values)
T =125°C
0.3
j
1.E-02
50
(maximum values)
0.4
T =125°C
j
0.5
70
V
V (V)
t(s)
FM
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
R
j
j
j
j
j
j
0.6
(V)
(maximum values)
90
0.7
1.E-01
T =25°C
j
0.8
110
0.9
1.0
130
T =125°C
T =50°C
T =75°C
c
c
c
1.1
1.E+00
150
1.2
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10000
1000
1.E-03
100
Z
th(j-c)
Single pulse
1
C(pF)
= 0.5
= 0.2
= 0.1
/R
th(j-c)
1.E-02
10
t (s)
p
V (V)
R
1.E-01
STPS80150CW
100
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
RMS
tp
1.E+00
1000
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