STPS80150CW STMicroelectronics, STPS80150CW Datasheet - Page 2

• Manufacturer Part Number: STPS80150CW
• Description: DIODE SCHOTTKY 150V 40A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS80150CW

• Voltage - Forward (vf) (max) @ If: 840mV @ 40A
• Current - Reverse Leakage @ Vr: 30µA @ 150V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 40 A
• Max Surge Current: 500 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.9 V at 80 A
• Maximum Reverse Leakage Current: 30 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 150V
• Forward Current If(av): 80A
• Forward Voltage Vf Max: 960mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3221; 497-3221-5; 497-3221

STPS80150CW
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 s, < 2%
To evaluate the conduction losses use the following equation:
P = 0.62 x I F(AV) + 0.003 I F
Fig. 1: Conduction losses versus average current
(per diode).
40
35
30
25
20
15
10
Fig. 3: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
2/6
When the diodes 1 and 2 are used simultaneously :
5
0
Symbol
Symbol
1
0
R
R
Tj(diode 1) = P(diode1) x R
0
P
25
V
P
th(j-c)
th(j-c)
F(AV)
I
R
P
ARM
F
ARM p
*
*
5
(W)
(25°C)
(t )
10
Junction to case
Junction to case
50
Reverse leakage
current
Forward voltage drop
= 0.05
15
Parameter
20
75
= 0.1
2
(RMS)
I
F(AV)
T (°C)
j
25
(A)
= 0.2
th(j-c)
100
30
(Per diode) + P(diode 2) x R
35
= 0.5
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Parameter
125
40
=tp/T
= 1
Tests Conditions
T
45
tp
150
50
V
I
I
I
I
Fig. 2: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 4: Average forward current versus ambient
temperature ( =0.5, per diode).
45
40
35
30
25
20
15
10
F
F
F
F
0.01
5
0
R
0.1
= 40 A
= 40 A
= 80 A
= 80 A
0
I
1
0.01
F(AV)
= V
P
P
ARM
ARM p
RRM
(A)
=tp/T
Per diode
Coupling
th(c)
(1µs)
25
(t )
Total
T
0.1
tp
50
Min.
R
1
R
75
th(j-a)
th(j-a)
T
t (µs)
p
=15°C/W
amb
=R
th(j-c)
Typ.
0.68
0.8
0.9
0.8
(°C)
Value
5
6
100
0.7
0.5
0.3
10
Max.
0.84
0.74
0.96
0.86
125
30
20
100
150
°C/W
°C/W
Unit
Unit
mA
µA
V
1000
175