BT149G AMO NXP Semiconductors, BT149G AMO Datasheet

SCRs AMMORA SCR

BT149G AMO

Manufacturer Part Number
BT149G AMO
Description
SCRs AMMORA SCR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT149G AMO

Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT149G,126
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
cathode (k)
gate (g)
anode (a)
Passivated, sensitive gate thyristors in a SOT54 plastic package.
BT149 series
Thyristors logic level
Rev. 04 — 20 August 2004
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
General purpose switching and phase control.
V
V
V
DRM
DRM
DRM
, V
, V
, V
RRM
RRM
RRM
200 V (BT149B)
400 V (BT149D)
600 V (BT149G)
Simplified outline
SOT54 (TO-92)
I
I
I
T(RMS)
T(AV)
TSM
3
2
1
8 A.
0.5 A
0.8 A
Product data sheet
Symbol
sym037

Related parts for BT149G AMO

BT149G AMO Summary of contents

Page 1

BT149 series Thyristors logic level Rev. 04 — 20 August 2004 1. Product profile 1.1 General description Passivated, sensitive gate thyristors in a SOT54 plastic package. 1.2 Features Designed to be interfaced directly to microcontrollers, logic integrated circuits and other ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name Description BT149B - plastic single-ended leaded (through hole) package; 3 leads BT149D BT149G 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating ...

Page 3

Philips Semiconductors 0.8 P tot (W) 0.6 0 form factor = I /I T(RMS) T(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values TSM (A) 8 ...

Page 4

Philips Semiconductors TSM ( ms. p Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values T(RMS) (A) 1.5 1 ...

Page 5

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-lead) lead R thermal resistance from junction to th(j-a) ambient th(j-lead) (K/ ...

Page 6

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise stated. j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage ...

Page 7

Philips Semiconductors 1.6 V GT(Tj) V GT(25 C) 1.2 0.8 0 Fig 7. Normalized gate trigger voltage as a function of junction temperature ( (1) (2) (3) 0 0.4 1.2 ...

Page 8

Philips Semiconductors 3 I H(Tj Fig 11. Normalized holding current as a function of junction temperature. 7. Package information Epoxy meets requirements of UL94 V-0 ...

Page 9

Philips Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 ...

Page 10

Philips Semiconductors 9. Revision history Table 6: Revision history Document ID Release date BT149_SERIES_4 20040820 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. BT149_SERIES_3 20010902 ...

Page 11

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

Related keywords