BT149G AMO NXP Semiconductors, BT149G AMO Datasheet - Page 9
![SCRs AMMORA SCR](/photos/16/4/160465/to3_sml.jpg)
BT149G AMO
Manufacturer Part Number
BT149G AMO
Description
SCRs AMMORA SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT149G_AMO.pdf
(12 pages)
Specifications of BT149G AMO
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT149G,126
Philips Semiconductors
8. Package outline
Fig 13. Package outline.
9397 750 13508
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
Rev. 04 — 20 August 2004
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
BT149 series
Thyristors logic level
ISSUE DATE
b
97-02-28
04-06-28
c
e 1
e
SOT54
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