BT149G AMO NXP Semiconductors, BT149G AMO Datasheet - Page 10

• Manufacturer Part Number: BT149G AMO
• Description: SCRs AMMORA SCR
• Manufacturer: NXP Semiconductors

Specifications of BT149G AMO

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT149G,126

Philips Semiconductors
9. Revision history
Table 6:
9397 750 13508
Product data sheet
Document ID
BT149_SERIES_4
Modifications:
BT149_SERIES_3
BT149_SERIES_2
BT149_SERIES_1
Revision history
Release date
20040820
20010902
20010901
19970901
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 04 — 20 August 2004
Change notice
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-
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Order number
9397 750 13508
not applicable
not applicable
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT149 series
Thyristors logic level
Supersedes
BT149_SERIES_3
BT149_SERIES_2
BT149_SERIES_1
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