BT168G NXP Semiconductors, BT168G Datasheet - Page 10
![SCRs BULK MOSFET](/photos/16/4/160465/to3_sml.jpg)
BT168G
Manufacturer Part Number
BT168G
Description
SCRs BULK MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BT168G112.pdf
(12 pages)
Specifications of BT168G
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT168G,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT168G
Manufacturer:
PHILIPS
Quantity:
1 000
Company:
Part Number:
BT168GW
Manufacturer:
TI
Quantity:
36 000
Part Number:
BT168GW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BT168GW115
Manufacturer:
NXP Semiconductors
Quantity:
99 655
Part Number:
BT168GWF
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9. Revision history
Table 6:
9397 750 13511
Product data sheet
Document ID
BT168_SERIES_4
Modifications:
BT168_SERIES_3
BT168_SERIES_2
BT168_SERIES_1
Revision history
Release date
20040820
20010902
20010901
19970901
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 04 — 20 August 2004
Thyristors logic level for RCD/GFI/LCCB applications
Change notice
-
-
-
-
Order number
9397 750 13511
not applicable
not applicable
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
Supersedes
BT168_SERIES_3
BT168_SERIES_2
BT168_SERIES_1
-
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