BT168G NXP Semiconductors, BT168G Datasheet - Page 5
![SCRs BULK MOSFET](/photos/16/4/160465/to3_sml.jpg)
BT168G
Manufacturer Part Number
BT168G
Description
SCRs BULK MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BT168G112.pdf
(12 pages)
Specifications of BT168G
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT168G,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
BT168G
Manufacturer:
PHILIPS
Quantity:
1 000
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Part Number:
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Manufacturer:
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Quantity:
36 000
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Manufacturer:
NXP/恩智浦
Quantity:
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Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
NXP Semiconductors
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
20 000
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13511
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
5
Thermal characteristics
10
4
10
3
Conditions
printed-circuit board
mounted; lead length = 4 mm
Rev. 04 — 20 August 2004
10
Thyristors logic level for RCD/GFI/LCCB applications
2
10
1
Min
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
P
1
Typ
-
150
t
p
T
t
p
(s)
001aab451
Max
60
-
=
t
T
t
p
10
Unit
K/W
K/W
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