BLF346 NXP Semiconductors, BLF346 Datasheet - Page 10

• Manufacturer Part Number: BLF346
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF346

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-119-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF346,112

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-A operation; V
Fig.12 Input impedance as a function of frequency
( )
Z i
4
2
0
2
4
6
160
Fig.14 Definition of MOS impedance.
(series components); typical values.
Z i
180
DS
= 28 V; I
x i
r i
200
D
= 3 A; P
Z L
L
MBA379
= 30 W; T
220
f (MHz)
MGG110
h
= 70 C.
240
10
handbook, halfpage
handbook, halfpage
Class-A operation; V
Fig.13 Load impedance as a function of frequency
Class-A operation; V
Fig.15 Power gain as a function of frequency;
(dB)
G p
( )
Z L
20
16
12
2
1
0
8
4
0
160
160
(series components); typical values.
typical values.
180
180
DS
DS
= 28 V; I
= 28 V; I
200
D
200
D
= 3 A; P
= 3 A; P
R L
X L
L
L
= 30 W; T
= 30 W; T
Product specification
220
220
f (MHz)
f (MHz)
BLF346
MGG111
MGG112
h
h
= 70 C.
= 70 C.
240
240