BLF346 NXP Semiconductors, BLF346 Datasheet - Page 4

• Manufacturer Part Number: BLF346
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF346

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-119-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF346,112

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 26
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
SYMBOL
GS
GROUP
group indicator
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of matched pairs
forward transconductance
drain-source on-state resistance V
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
V
V
V
V
V
V
GS
GS
GS
DS
DS
DS
GS
GS
GS
GS
GS
= 0; I
= 0; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; V
= 0; V
= 0; V
= 0; V
4
CONDITIONS
D
DS
DS
DS
DS
= 50 mA
GROUP
D
D
D
D
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
= 50 mA
= 50 mA
= 5 A
= 5 A
DS
W
O
Q
R
U
P
S
T
V
X
Y
Z
= 10 V
= 0
65
2
3
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.2
0.2
22
225
180
25
TYP.
Product specification
LIMITS
(V)
2.5
1
4.5
100
0.3
MAX.
BLF346
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
UNIT
A