BLF4G10-160 NXP Semiconductors, BLF4G10-160 Datasheet
BLF4G10-160
Specifications of BLF4G10-160
Related parts for BLF4G10-160
BLF4G10-160 Summary of contents
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... BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance common source class-AB test circuit. case Mode of operation f ...
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... LDMOST ceramic package; 2 mounting holes; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor Simplified outline Symbol 1 3 [1] 2 Min - 0 Conditions ...
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... Mode of operation: 2-tone 900 mA Symbol Parameter IMD3 IMD5 IMD7 7.1 Ruggedness in class-AB operation The BLF4G10-160 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA BLF4G10-160_1 Product data sheet Characteristics Parameter Conditions drain-source breakdown V voltage gate-source threshold voltage ...
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... Fig 2. Two-tone power gain and drain efficiency as 001aag548 IMD3 (dBc) IMD3 IMD5 IMD7 80 120 P (W) L(AV case (1) I (2) I (3) I (4) I Fig 4. IMD3 as a function of average load power; Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor 900 mA case f = 894 MHz. ...
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... Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as 001aag552 ACPR (dBc) EVM M EVM rms 60 80 100 P (W) L(AV case Fig 8. GSM EDGE ACPR and rms EVM as functions of Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor 50 60 ACPR 400 ACPR 70 600 900 mA ...
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... MHz. ( 881.5 MHz. ( 894 MHz. Fig 10. CDMA power gain as a function of average load 35 ACPR (dBc) 45 ACPR 55 750 65 ACPR 1980 881.5 MHz. case Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor 1100 mA power at various frequencies; typical values, measured in a CDMA demo test circuit ...
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... The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm. See Table 8 for a list of components. Fig 13. Component layout for 894 MHz production test circuit BLF4G10-160_1 Product data sheet BLF4G10-160 BLF4G10-160 Input-Rev1 Output-Rev1 Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor C10 6.15 and r RF out ...
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... F electrolytic capacitor 220 F stripline - stripline - tapered stripline - stripline - stripline - stripline - stripline - tapered stripline - stripline - stripline - SMD resistor 5.1 Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor and Figure 13). Remarks [1] [1] [1] 1812X7R105KL2AB [ 0.914 mm 10.160 mm [ 0.914 mm 24.384 mm [2] ( 0.914 mm 19.812 mm [ ...
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... Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit BLF4G10-160_1 Product data sheet R10 BLF4G10-160 BLF4G10-160 CDMA in CDMA out Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor V ( C10 C11 ( C10 out C12 L10 001aag559 C11 L10 L9 C12 001aag560 © NXP B.V. 2007. All rights reserved ...
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... SMD resistor SMD resistor potentiometer SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor voltage regulator transistor BLF4G10-160 Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor and Figure 15). Value Remarks [ [1] 1.3 pF 100 2200 F [1] ...
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... REFERENCES JEDEC JEITA Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
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... Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Root Mean Square Surface-Mount Device Voltage Standing-Wave Ratio Data sheet status Product data sheet Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 22 June 2007 BLF4G10-160 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 June 2007 Document identifier: BLF4G10-160_1 ...