blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet

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blf4g10-120

Manufacturer Part Number
blf4g10-120
Description
Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
RF performance at T
[1]
[2]
Mode of
operation
CW
GSM EDGE 861 to 961 28
2-tone
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an I
Easy power control
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (800 MHz to 1000 MHz)
Internally matched for ease of use
ACPR
ACPR
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Load power = 48 W (AV)
Gain = 19 dB (typ)
Efficiency = 40 % (typ)
ACPR
ACPR
EVM
400
600
Typical performance
Dq
rms
at 30 kHz resolution bandwidth
at 30 kHz resolution bandwidth
f
(MHz)
861 to 961 28
861 to 961 28
400
600
of 850 mA:
= 1.5 % (typ)
= 61 dBc (typ)
= 72 dBc (typ)
h
= 25 C in a common base class-AB test circuit.
V
(V)
DS
P
(W)
120
48 (AV)
120 (PEP) 19
L
G
(dB)
(typ)
19
19
p
(%)
57
40
46
D
ACPR
(dBc)
(typ)
-
-
61
[1]
400
Product data sheet
ACPR
(dBc)
(typ)
-
-
72
[2]
600
EVM
(%)
-
1.5
-
rms
IMD3
(dBc)
(typ)
-
-
31

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blf4g10-120 Summary of contents

Page 1

... BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: RF performance at T Mode of operation CW GSM EDGE 861 to 961 28 2-tone [1] ACPR ...

Page 2

... Philips Semiconductors 1.3 Applications RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2: Pin BLF4G10-120 (SOT502A BLF4G10S-120 (SOT502B [1] Connected to flange 3. Ordering information Table 3: Type number ...

Page 3

... Symbol G p IRL D IMD3 7.1 Ruggedness in class-AB operation The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 Thermal characteristics Parameter ...

Page 4

... IMD (dBc 100 850 mA 960 MHz Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 001aac400 (%) (dB 150 200 P ( ...

Page 5

... 850 mA 960 MHz Fig 7. GSM EDGE rms EVM as a function of average load power; typical values 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 001aac404 60 ACPR D (dBc) (%) (W) L(AV case Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as ...

Page 6

See Table 8 for list of components. Fig 9. Class-AB test circuit for operation at 960 MHz C17 C13 C10 C12 ...

Page 7

The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Duroid dielectric ( The other side is unetched and serves as a ground plane. See Table 8 for list of components. ...

Page 8

... Mounted flat. [3] Low ESR. [4] Striplines are on a double copper-clad Ultralam 2000 PCB ( 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 List of components (see Figure 9 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...

Page 9

... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 scale 19.96 9.50 9.53 1.14 19 ...

Page 11

... I Dq LDMOS PEP RF SMD VSWR 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 Abbreviations Description Adjacent Channel Power Ratio Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Equivalent Series Resistance Error Vector Magnitude Global System for Mobile communications ...

Page 12

... Revision history Table 10: Revision history Document ID Release date BLF4G10-120_ 20060110 4G10S-120_1 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 Data sheet status Change notice Product data sheet - Rev. 01 — 10 January 2006 UHF power LDMOS transistor Doc. number Supersedes 9397 750 14549 - © ...

Page 13

... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14549 Product data sheet BLF4G10-120; BLF4G10S-120 [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. ...

Page 14

... Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 13 BLF4G10-120; BLF4G10S-120 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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