blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 2

• Manufacturer Part Number: blf4g10-120
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
9397 750 14549
Product data sheet
1.3 Applications
Table 2:
[1]
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF4G10-120 (SOT502A)
1
2
3
BLF4G10S-120 (SOT502B)
1
2
3
Type number
BLF4G10-120
BLF4G10S-120
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 800 MHz to 1000 MHz frequency range.
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 01 — 10 January 2006
BLF4G10-120; BLF4G10S-120
Description
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
UHF power LDMOS transistor
1
2
1
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
3
0.5
65
3
Symbol
Max
65
+15
12
+150
200
2
2
sym039
sym039
Version
SOT502A
SOT502B
Unit
V
V
A
1
3
1
3
C
C
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