BLF4G10-160 NXP Semiconductors, BLF4G10-160 Datasheet - Page 8

• Manufacturer Part Number: BLF4G10-160
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10-160,112

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Table 8.
[1]
[2]
Component
C1, C4, C6, C7
C2
C3
C5, C9
C8
C10
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
R1
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
thickness = 0.635 mm.
List of components (see
Description
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
tantalum capacitor
ceramic capacitor
electrolytic capacitor
stripline
stripline
tapered stripline
stripline
stripline
stripline
stripline
tapered stripline
stripline
stripline
SMD resistor
Rev. 01 — 22 June 2007
Figure 12
Value
68 pF
1.5 pF
1.4 pF
10 F
1 F
220 F
-
-
-
-
-
-
-
-
-
-
5.1
and
Figure
[1]
[1]
[1]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
Remarks
1812X7R105KL2AB
(W
(W
(W1
0.914 mm
(W
(W
(W
(W
(W1
17.221 mm
(W
(W
13).
UHF power LDMOS transistor
L) 0.914 mm
L) 0.914 mm
L) 19.812 mm
L) 0.914 mm
L) 1.524 mm
L) 17.221 mm
L) 0.914 mm
L) 0.914 mm
W2
W2
BLF4G10-160
L)
19.812 mm
L)
0.914 mm
© NXP B.V. 2007. All rights reserved.
10.160 mm
24.384 mm
42.342 mm
42.418 mm
19.126 mm
6.858 mm
21.438 mm
22.479 mm
r
11.024 mm
20.625 mm
= 6.15 and
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