BF245C NXP Semiconductors, BF245C Datasheet - Page 6
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BF245C
Manufacturer Part Number
BF245C
Description
RF JFET BULK FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF245C112.pdf
(13 pages)
Specifications of BF245C
Configuration
Single
Mounting Style
Through Hole
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
- 30 V
Continuous Drain Current
25 mA
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF245C,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF245C
Manufacturer:
FSC
Quantity:
24 000
Company:
Part Number:
BF245C
Manufacturer:
FAIRCHILD
Quantity:
63 000
Part Number:
BF245C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NXP Semiconductors
1996 Jul 30
handbook, halfpage
handbook, halfpage
N-channel silicon field-effect transistors
Fig.10 Drain current as a function of junction
V
V
DS
DS
(mA)
= 15 V; T
= 15 V.
(mA)
I D
Fig.8
I D
15
10
30
20
10
5
0
0
0
0
temperature; typical values for BF245B.
j
= 25 C.
Output characteristics for BF245C;
typical values.
50
10
100
V GS = 0 V
V DS (V)
V GS = 0 V
−1 V
−4 V
−2 V
−3 V
T j (°C)
−1 V
−2 V
MGE776
MBH554
150
20
6
handbook, halfpage
handbook, halfpage
Fig.9
Fig.11 Drain current as a function of junction
V
V
DS
DS
(mA)
I D
(mA)
= 15 V.
= 15 V.
I D
20
16
12
4
3
2
1
0
8
4
0
Drain current as a function of junction
temperature; typical values for BF245A.
0
temperature; typical values for BF245C.
0
BF245A; BF245B; BF245C
50
50
100
100
Product specification
V GS = 0 V
V GS = 0 V
T j (°C)
T j (°C)
−2 V
−4 V
−1.5 V
−0.5 V
MGE775
MGE779
−1 V
150
150