BF245C NXP Semiconductors, BF245C Datasheet - Page 9
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BF245C
Manufacturer Part Number
BF245C
Description
RF JFET BULK FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF245C112.pdf
(13 pages)
Specifications of BF245C
Configuration
Single
Mounting Style
Through Hole
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
- 30 V
Continuous Drain Current
25 mA
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF245C,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF245C
Manufacturer:
FSC
Quantity:
24 000
Company:
Part Number:
BF245C
Manufacturer:
FAIRCHILD
Quantity:
63 000
Part Number:
BF245C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NXP Semiconductors
1996 Jul 30
handbook, halfpage
N-channel silicon field-effect transistors
Fig.20 Drain-source on-state resistance as a
V
R DSon
DS
(kΩ)
= 0; f = 1 kHz; T
10
10
10
10
−1
1
3
2
function of gate-source voltage;
typical values.
0
amb
−1
BF245A
= 25 C.
−2
BF245B
−3
BF245C
V GS (V)
MGE790
−4
9
handbook, halfpage
V
Input tuned to minimum noise.
DS
Fig.21 Noise figure as a function of frequency;
(dB)
F
= 15 V; V
3
2
1
0
1
typical values.
GS
BF245A; BF245B; BF245C
= 0; R
G
10
= 1 k; T
amb
= 25 C.
10
2
typ
Product specification
f (MHz)
MGE786
10
3