BF1211R NXP Semiconductors, BF1211R Datasheet - Page 10

• Manufacturer Part Number: BF1211R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1211R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-61B
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1211R,215

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2003 Dec 16
handbook, full pagewidth
(MHz)
1000
100
200
300
400
500
600
700
800
900
N-channel dual-gate MOS-FETs
50
f
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.987
0.985
0.979
0.965
0.949
0.929
0.904
0.876
0.846
0.816
0.791
s
11
DS
= 5 V; V
ANGLE
15.25
22.84
30.15
30.25
44.24
51.16
58.16
65.15
72.22
R GEN
3.86
7.73
(deg)
50 Ω
V I
G2-S
DS
50 Ω
(dB)
F
= 5 V; V
MAGNITUDE
0.9
1.3
min
R2
= 4 V; I
Fig.21 Cross-modulation test set-up.
(ratio)
2.928
2.921
2.807
2.846
2.784
2.704
2.639
2.558
2.486
2.402
2.315
4.7 nF
C2
G2-S
D
= 15 mA; T
s
V GG
21
10 kΩ
= 4 V; I
R G1
R1
V AGC
ANGLE
(deg)
175.8
171.6
163.2
155.0
146.7
138.9
130.9
123.0
115.1
107.2
99.9
4.7 nF
D
10
C1
amb
= 15 mA; T
(ratio)
0.693
0.707
= 25 C
MAGNITUDE
DUT
0.0005
0.0010
0.0015
0.0028
0.0034
0.0037
0.0040
0.0039
0.0037
0.0032
0.0028
(ratio)
BF1211; BF1211R; BF1211WR

amb
V DS
opt
L1
≈
= 25 C
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
(deg)
16.75
37.33
ANGLE
(deg)
MGS315
89.3
86.9
91.1
77.4
74.0
71.4
69.6
69.0
70.0
74.5
87.1
R L
50 Ω
MAGNITUDE
(ratio)
0.993
0.993
0.993
0.988
0.985
0.981
0.976
0.971
0.965
0.960
0.956
Product specification
29.85
29.90
s
()
R
22
n
ANGLE
12.48
15.54
18.59
21.65
24.27
27.79
30.94
(deg)
1.58
3.14
6.31
9.41