BF1211R NXP Semiconductors, BF1211R Datasheet - Page 6

• Manufacturer Part Number: BF1211R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1211R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-61B
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1211R,215

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.7
V
(1) V
(2) V
(3) V
V
(1) V
(2) V
(3) V
(μA)
(mA)
DS
I G1
DS
I D
Fig.5 Transfer characteristics; typical values.
100
= 5 V; T
= 5 V; T
25
20
15
10
80
60
40
20
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
5
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
= 4 V.
= 3.5 V.
= 3 V.
= 4 V.
= 3.5 V.
= 3 V.
j
j
= 25 C.
= 25 C.
0.5
0.5
(4) V
(5) V
(6) V
(4) V
(5) V
(6) V
1
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
(1)
(2)
(3)
(4)
1
= 2.5 V.
= 2 V.
= 1.5 V.
= 2.5 V.
= 2 V.
= 1.5 V.
1.5
1.5
(5)
(6)
(7)
(1)
(2)
(3)
(7) V
(7) V
2
V G1-S (V)
V G1-S (V)
MDB829
MDB831
G2-S
G2-S
(4)
(5)
(6)
(7)
2.5
= 1 V.
= 1 V.
2
6
handbook, halfpage
handbook, halfpage
Fig.8
V
(1) V
(2) V
(3) V
V
(1) V
(2) V
G2-S
DS
(mS)
(mA)
y fs
I D
= 5 V; T
Fig.6 Output characteristics; typical values.
24
16
40
30
20
10
8
0
G1-S
G1-S
G1-S
0
G2-S
G2-S
= 4 V; T
BF1211; BF1211R; BF1211WR
0
0
Forward transfer admittance as a function
of drain current; typical values.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 4 V.
= 3.5 V.
j
= 25 C.
j
= 25 C.
6
(6)
(4) V
(5) V
(6) V
(3) V
(4) V
2
12
G1-S
G1-S
G1-S
G2-S
G2-S
= 1.2 V.
= 1.1 V.
= 1 V.
= 3 V.
= 2.5 V.
(5)
18
4
Product specification
V DS (V)
(7) V
(8) V
(5) V
(6) V
24
(4)
I D (mA)
(1)
(2)
(3)
MDB832
MDB830
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
G1-S
G1-S
G2-S
G2-S
30
= 0.9 V.
= 0.8 V.
= 2 V.
= 1.5 V.
6