BF1211R NXP Semiconductors, BF1211R Datasheet - Page 11

• Manufacturer Part Number: BF1211R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1211R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-61B
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1211R,215

NXP Semiconductors
PACKAGE OUTLINES
2003 Dec 16
Plastic surface-mounted package; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
11
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1211; BF1211R; BF1211WR
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X