BAW56W,115 NXP Semiconductors, BAW56W,115 Datasheet - Page 5

• Manufacturer Part Number: BAW56W,115
• Description: DIODE SW DBL 90V 150MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAW56W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Voltage - Dc Reverse (vr) (max): 90V
• Current - Average Rectified (io) (per Diode): 150mA (DC)
• Diode Configuration: 1 Pair Common Anode
• Product: Switching Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934026020115::BAW56W T/R::BAW56W T/R

NXP Semiconductors
7. Characteristics
BAV756S_BAW56_SER_5
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
p
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
300 s;
Rev. 05 — 26 November 2007
F
F
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
…continued
BAV756S; BAW56 series
Conditions
I
I
I
I
V
V
V
V
V
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
= 0 V; f = 1 MHz
Conditions
L
= 100 ; measured at I
j
j
= 150 C
= 150 C
High-speed switching diodes
[1]
[2]
[3]
Min
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
255
360
255
350
300
Max
715
855
1
1.25
30
0.5
30
150
2
4
1.75
Unit
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
pF
ns
V
5 of 15
A
A
A