BAW56W,115 NXP Semiconductors, BAW56W,115 Datasheet - Page 6
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BAW56W,115
Manufacturer Part Number
BAW56W,115
Description
DIODE SW DBL 90V 150MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet
1.BAW56S115.pdf
(15 pages)
Specifications of BAW56W,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io) (per Diode)
150mA (DC)
Diode Configuration
1 Pair Common Anode
Product
Switching Diodes
Peak Reverse Voltage
90 V
Forward Continuous Current
0.15 A
Max Surge Current
4 A
Configuration
Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934026020115::BAW56W T/R::BAW56W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW56W,115
Manufacturer:
NXP Semiconductors
Quantity:
9 600
NXP Semiconductors
BAV756S_BAW56_SER_5
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of reverse
(mA)
(1) T
(2) T
(3) T
(4) T
( A)
(1) T
(2) T
(3) T
(4) T
I
I
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
voltage; typical values
voltage; typical values
0.2
0
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
(1)
20
(2)
0.6
(1)
(2)
(3)
(4)
(3)
40
(4)
60
1.0
V
80
F
006aab109
006aab110
(V)
V
R
(V)
Rev. 05 — 26 November 2007
100
1.4
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
BAV756S; BAW56 series
I
FSM
(A)
(pF)
10
C
10
2.5
2.0
1.5
1.0
0.5
d
10
1
0
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
1
j
= 25 C; prior to surge
5
10
amb
= 25 C
10
High-speed switching diodes
10
2
15
10
© NXP B.V. 2007. All rights reserved.
3
20
t
p
V
( s)
mbg704
mbh191
R
(V)
10
25
4
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