BAS101S,215 NXP Semiconductors, BAS101S,215 Datasheet - Page 3

DIODE SW HI-VOLT DUAL SOT-23

BAS101S,215

Manufacturer Part Number
BAS101S,215
Description
DIODE SW HI-VOLT DUAL SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS101S,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
150nA @ 250V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
100 mA
Max Surge Current
1 A
Configuration
Dual
Recovery Time
50 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
150 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060849215
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS101_BAS101S_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
Symbol
Per diode
V
V
I
I
I
Per device
P
T
T
T
Symbol
Per device
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
j
= 25 °C prior to surge
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 14 December 2009
Conditions
in free air
Conditions
series connection
series connection
series connection
t
δ ≤ 0.25
square wave;
t
T
p
p
amb
≤ 1 ms;
≤ 1 μs
≤ 25 °C
BAS101; BAS101S
High-voltage switching diodes
[1]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
−65
−65
Typ
-
© NXP B.V. 2009. All rights reserved.
Max
300
600
300
600
200
100
1
9
250
150
+150
+150
Max
500
Unit
V
V
V
V
mA
mA
A
A
mW
°C
°C
°C
Unit
K/W
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