BAS101S,215 NXP Semiconductors, BAS101S,215 Datasheet - Page 5

• Manufacturer Part Number: BAS101S,215
• Description: DIODE SW HI-VOLT DUAL SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS101S,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 100 mA
• Max Surge Current: 1 A
• Configuration: Dual
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060849215

NXP Semiconductors
BAS101_BAS101S_2
Product data sheet
Fig 1.
Fig 3.
(mA)
I
F
(1) T
(2) T
(3) T
(μA)
10
10
500
400
300
200
100
I
10
R
10
−1
−2
0
1
2
0
Forward current as a function of forward
voltage; typical values
0
V
Reverse current as a function of junction
temperature; typical values
amb
amb
amb
R
= 300 V
= 150 °C
= 75 °C
= 25 °C
40
0.5
80
(1)
(2)
120
(3)
1
V
160
F
(V)
T
mhc618
mhc619
j
(°C)
Rev. 02 — 14 December 2009
200
1.5
Fig 2.
Fig 4.
I
(pF)
FSM
(A)
C
10
0.42
0.38
0.34
d
10
0.3
10
−1
1
2
1
0
Based on square wave currents
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
BAS101; BAS101S
10
10
amb
= 25 °C
High-voltage switching diodes
10
20
2
10
30
© NXP B.V. 2009. All rights reserved.
3
V
t
p
R
(μs)
mhc621
mbg703
(V)
10
40
4
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