PMEG2005CT,215 NXP Semiconductors, PMEG2005CT,215 Datasheet - Page 5

• Manufacturer Part Number: PMEG2005CT,215
• Description: SCHOTTKY RECT 20V 500MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMEG2005CT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Voltage - Forward (vf) (max) @ If: 390mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io) (per Diode): 500mA
• Diode Configuration: 1 Pair Common Cathode
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 10 A
• Configuration: Single Dual Anode
• Recovery Time: 22 ns
• Forward Voltage Drop: 360 mV
• Maximum Reverse Leakage Current: 30 uA
• Maximum Power Dissipation: 330 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061751215

NXP Semiconductors
7. Characteristics
PMEG2005CT
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
duty cycle =
0.25
0.02
0.5
0.1
1
0
0.75
0.33
0.05
0.01
0.2
Table 7.
T
[1]
2
Symbol
Per device
V
I
C
t
10
R
rr
O
j
F
d
= 25
3
−2
, standard footprint
When switched from I
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
All information provided in this document is subject to legal disclaimers.
10
−1
F
= 10 mA to I
Rev. 2 — 22 June 2010
R
1
= 10 mA; R
500 mA low V
I
V
V
Conditions
I
I
I
I
V
F
F
F
F
F
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 10 V
= 20 V
= 1 V; f = 1 MHz
L
= 100 Ω; measured at I
10
F
dual MEGA Schottky barrier rectifier
[1]
Min
-
-
-
-
-
-
-
-
-
PMEG2005CT
10
R
= 1 mA.
2
Typ
155
215
285
360
11
30
66
22
95
t
p
© NXP B.V. 2010. All rights reserved.
(s)
006aab535
Max
130
190
240
330
390
40
200
80
-
10
3
mV
Unit
mV
mV
mV
mV
μA
μA
pF
ns
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