BAS21J,115 NXP Semiconductors, BAS21J,115 Datasheet - Page 3

• Manufacturer Part Number: BAS21J,115
• Description: DIODE HIGH SPEED SWITCHING SC-90
• Manufacturer: NXP Semiconductors

Specifications of BAS21J,115

• Package / Case: SC-90, SOD-323F
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 300V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 300 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 3 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Operating Temperature Range: + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060933115::BAS21J T/R::BAS21J T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS21J_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
[3]
Symbol
V
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-sp)
Pulse test: t
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
j
= 25 C prior to surge.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
2
.
300 s;
Rev. 01 — 8 March 2007
0.02.
Conditions
in free air
Conditions
t
square wave
T
p
amb
t
t
t
p
p
p
0.25
0.5 ms;
= 100 s
= 1 ms
= 10 ms
25 C
Single high-speed switching diode
[1][2]
[3][4]
[3]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
© NXP B.V. 2007. All rights reserved.
Max
300
300
250
1
3
2.3
1.7
550
150
+150
+150
BAS21J
Max
230
55
Unit
V
V
mA
A
A
A
A
mW
2
C
C
C
.
Unit
K/W
K/W
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