BAS21J,115 NXP Semiconductors, BAS21J,115 Datasheet - Page 6

• Manufacturer Part Number: BAS21J,115
• Description: DIODE HIGH SPEED SWITCHING SC-90
• Manufacturer: NXP Semiconductors

Specifications of BAS21J,115

• Package / Case: SC-90, SOD-323F
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 300V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 300 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 3 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Operating Temperature Range: + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060933115::BAS21J T/R::BAS21J T/R

NXP Semiconductors
8. Test information
BAS21J_1
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
(1) I
V = V
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
S
R
R
= 50
= 1 mA
I
F
R
S
I
F
r
= 0.35 ns
D.U.T.
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
mga881
SAMPLING
R
i
= 50
Rev. 01 — 8 March 2007
V
R
t
10 %
r
90 %
input signal
t
p
p
= 100 ns; duty cycle
Single high-speed switching diode
t
I
F
= 0.05
output signal
© NXP B.V. 2007. All rights reserved.
BAS21J
t rr
(1)
t
6 of 10