STTH812G-TR STMicroelectronics, STTH812G-TR Datasheet - Page 3

• Manufacturer Part Number: STTH812G-TR
• Description: DIODE ULT FAST 1200V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH812G-TR

• Voltage - Forward (vf) (max) @ If: 2.2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 8µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 2.2 V
• Recovery Time: 100 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 80 A
• Reverse Current Ir: 8 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5264-2

STTH812
Table 4.
Figure 1.
Figure 3.
Symbol
20
18
16
14
12
10
V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
8
6
4
2
0
RM
t
t
1.E-03
S
FP
rr
fr
0
P(W)
Z
th(j-c)
Single pulse
TO-220AC
D PAK
TO-220Ins
2
1
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
/R
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
2
δ = 0.05
1.E-02
3
Parameter
δ = 0.1
4
I
F(AV)
t (s)
p
δ = 0.2
5
(A)
6
1.E-01
δ = 0.5
7
δ
=tp/T
8
I
V
I
V
I
V
I
V
I
V
I
T
δ = 1
F
F
F
F
F
F
T
j
R
R
R
R
FR
9
= 1 A, dI
= 1 A, dI
= 8 A, dI
= 8 A, dI
= 8 A
= 8 A, dI
= 25° C
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
1.E+00
tp
= 1.5 x V
10
Test conditions
F
F
F
F
F
dI
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs,
j
j
= 25° C
= 25° C
F
Fmax
j
j
/dt = 50 A/µs
= 125° C
= 125° C
80
70
60
50
40
30
20
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1.E-03
0.0
I
Z
FM
, T
th(j-c)
Single pulse
TO-220FPAC
(A)
j
0.5
= 25° C
/R
th(j-c)
(maximum values)
forward current
impedance junction to case versus
pulse duration
Forward voltage drop versus
1.0
Relative variation of thermal
T =150°C
j
1.E-02
1.5
(typical values)
T =150°C
j
2.0
t (s)
1.E-01
p
Min.
2.5
V
FM
(V)
3.0
Typ
50
14
2
7
3.5
(maximum values)
1.E+00
Characteristics
T =25°C
j
Max.
4.0
100
400
70
21
4.5
1.E+01
Unit
ns
ns
A
V
5.0
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