STTH812G-TR STMicroelectronics, STTH812G-TR Datasheet - Page 5

• Manufacturer Part Number: STTH812G-TR
• Description: DIODE ULT FAST 1200V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH812G-TR

• Voltage - Forward (vf) (max) @ If: 2.2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 8µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 2.2 V
• Recovery Time: 100 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 80 A
• Reverse Current Ir: 8 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5264-2

STTH812
Figure 11. Forward recovery time versus dI
Figure 13. Thermal resistance junction to
80
70
60
50
40
30
20
10
700
600
500
400
300
200
0
0
R
0
t (ns)
th(j-a)
fr
(°C/W)
5
(typical values)
100
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
10
15
200
dI /dt(A/µs)
S (cm²)
CU
F
20
cu
= 35 µm)
300
25
30
V =1.5 x V max.
400
FR
T =125°C
I =I
F
j
F(AV)
35
F
500
F
40
/dt
Figure 12. Junction capacitance versus
1000
100
10
1
1
C(pF)
reverse voltage applied (typical
values)
10
V (V)
R
100
Characteristics
V
OSC
F=1MHz
T =25°C
=30mV
j
RMS
1000
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