STTH812G-TR STMicroelectronics, STTH812G-TR Datasheet - Page 4

• Manufacturer Part Number: STTH812G-TR
• Description: DIODE ULT FAST 1200V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH812G-TR

• Voltage - Forward (vf) (max) @ If: 2.2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 8µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 2.2 V
• Recovery Time: 100 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 80 A
• Reverse Current Ir: 8 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5264-2

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
5
0
0
I
0
25
Q (µC)
RM
V =600V
T =125°C
V =600V
T =125°C
rr
R
j
R
j
(A)
50
50
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
Q
I
RM
RR
F
50
I =0.5 x I
F
/dt (typical values)
150
150
S factor
F(AV)
t
rr
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
I =0.5 x I
F
I =2 x I
/dt (typical values)
F
F
F
I =I
T (°C)
F
I =I
F
250
250
j
F(AV)
75
F(AV)
F(AV)
F(AV)
300
300
I =2 x I
F
350
350
F(AV)
100
400
Reference: T =125°C
400
V =600V
I =I
F
R
F(AV)
450
450
j
500
125
500
Figure 6.
Figure 8.
Figure 10. Transient peak forward voltage
500
450
400
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
45
40
35
30
25
20
15
10
50
5
0
0
0
0
V
S factor
0
t (ns)
FP
rr
I =I
T =125°C
F
j
F(AV)
(V)
50
50
Reverse recovery time versus dI
(typical values)
(typical values)
versus dI
100
Softness factor versus dI
100
100
I =2 x I
F
F(AV)
150
150
I =I
F
200
200
200
F(AV)
dI /dt(A/µs)
dI /dt(A/µs)
dI /dt(A/µs)
F
F
/dt (typical values)
F
F
250
250
I =0.5 x I
F
300
300
300
F(AV)
350
350
400
400
400
F
/dt
STTH812
I
V =600V
T =125°C
V =600V
T =125°C
F
450
450
j
R
j
R
≤
2xI
F(AV)
F
500
500
500
/dt