CRS08(TE85R,Q,M) Toshiba, CRS08(TE85R,Q,M) Datasheet

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CRS08(TE85R,Q,M)

Manufacturer Part Number
CRS08(TE85R,Q,M)
Description
DIODE SCHOTTKY 1.5A 30V S-FLAT
Manufacturer
Toshiba
Datasheet

Specifications of CRS08(TE85R,Q,M)

Voltage - Forward (vf) (max) @ If
360mV @ 1.5A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
3-2A1A (S-Flat)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Absolute Maximum Ratings
Electrical Characteristics
Forward voltage: V
Average forward current: I
Repetitive peak reverse voltage: V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Note 1: Tℓ = 86°C: Rectangular waveform (α = 180°), V
Note 2: Using continuously under heavy loads (e.g. the application of
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TM
Characteristics
Characteristics
” (Toshiba package name)
FM
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
= 0.36 V (max)
F (AV)
(Ta = 25°C)
= 1.5 A
RRM
(Ta = 25°C)
Symbol
I
V
F (AV)
I
T
FSM
RRM
I
I
T
Symbol
V
V
V
R
= 30 V
stg
RRM (1)
RRM (2)
R
j
FM (1)
FM (2)
FM (3)
th (j-a)
th (j-ℓ)
C
j
CRS08
30 (50 Hz)
I
I
I
V
V
V
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
FM
FM
FM
−40~125
−40~150
1.5 (Note 1)
RRM
RRM
R
Rating
= 10 V, f = 1.0 MHz
30
= 0.1 A
= 1.0 A
= 1.5 A
1
R
= 5 V
= 30 V
= 15 V
Test Condition
Unit
°C
°C
V
A
A
Weight: 0.013 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
0.345
Typ.
0.23
0.32
50
90
3-2A1A
2006-11-13
0.36
Max
140
1.0
70
20
CRS08
Unit: mm
°C/W
°C/W
Unit
mA
μA
pF
V

Related parts for CRS08(TE85R,Q,M)

CRS08(TE85R,Q,M) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Marking Abbreviation Code Part No. S8 CRS08 Standard Soldering Pad 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used ...

Page 3

125°C 1 75°C 0.3 25°C 0.1 0.03 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 Instantaneous forward voltage v F Tℓ max – (AV) 140 120 DC 100 ...

Page 4

I – 1000 Pulse test 100 0.1 0. 100 Junction temperature T j (°C) (typ.) 4.8 Rectangular waveform 4.0 ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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