IXGH32N120A3 IXYS, IXGH32N120A3 Datasheet - Page 2

• Manufacturer Part Number: IXGH32N120A3
• Description: IGBT PT 1200V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH32N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 32A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 1240
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
Note 1: Pulse test, t ≤ 300 ms, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
C(ON)
d(on)
ri
d(off)
fi
one or moreof the following U.S. patents:
fs
ies
oes
res
g
ge
gc
thJC
thCH
J
The product presented herein is under development.
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
= 25°C unless otherwise specified)
I
V
V
I
(TO-247)
C
C
Resistive load
I
V
CE
CE
C
= 50 A, V
= 50 A, V
CE
= 100 A, V
Test Conditions
= 10 V, V
= 25 V, V
= 960 V, R
PRELIMINARY TECHNICAL INFORMATION
CE
GE
GE
GE
GE
= 10 V, Note 1
= 15 V, V
4,850,072
4,881,106
G
= 15 V, Note 1
= 0 V, f = 1 MHz
= 20 V, Note1
= 10 Ω
4,931,844
5,017,508
5,034,796
CE
= 0.5 V
Characteristic Values
5,049,961
5,063,307
5,187,117
CES
The Technical Specifications
Min.
5,237,481
5,381,025
5,486,715
14
Typ.
2150
1240
0.21
200
6,162,665
6,259,123 B1
6,306,728 B1
130
140
20
15
48
89
15
34
39
0.42 K/W
Max.
6,404,065 B1
6,534,343
6,583,505
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405B2
6,710,463
TO-247 AD Outline
TO-268 Outline
Terminals: 1 - Gate
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
6,727,585
6,759,692
6771478 B2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
3 - Source
3 - Source
.4
IXGH 32N120A3
IXGT 32N120A3
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734B2
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.845
.640
.800
.209
.102
.098
.055
.084
.123
.031
.177
.144
.216