IXGH32N120A3 IXYS, IXGH32N120A3 Datasheet - Page 3

• Manufacturer Part Number: IXGH32N120A3
• Description: IGBT PT 1200V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH32N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 32A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 1240
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
10
0
0
9
8
7
6
5
4
3
2
1
0
0
6
8
1
Fig. 5. Collector-to-Emitter Voltage
10
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
v s. Gate-to-Emitter Voltage
12
2
14
2
V
V
V
CE
16
GE
CE
@ 125ºC
3
@ 25ºC
- Volts
- Volts
- Volts
18
3
V
V
GE
GE
4
20
= 30V
= 30V
25V
20V
25V
20V
22
4
15V
10V
15V
10V
5
I
C
24
T
= 150A
J
100A
50A
= 25ºC
26
5
6
28
30
6
7
100
250
225
200
175
150
125
100
5.5
4.5
3.5
2.5
1.5
0.5
90
80
70
60
50
40
30
20
10
75
50
25
0
0
5
4
3
2
1
-50
3
0
V
V
GE
GE
2
Fig. 2. Exteded Output Characteristics
-25
= 15V
4
= 30V
25V
20V
Fig. 4. Dependence of V
4
Fig. 6. Input Admittance
5
0
15V
10V
Junction Temperature
T
6
J
- Degrees Centigrade
25
6
V
V
8
GE
CE
@ 25ºC
- Volts
- Volts
10
50
7
I
I
I
12
C
C
C
T
= 32A
75
= 192A
= 96A
8
J
= - 40ºC
CE(sat)
125ºC
14
25ºC
100
9
16
on
125
10
18
150
11
20