IXGH32N120A3 IXYS, IXGH32N120A3 Datasheet - Page 6

IGBT PT 1200V 75A TO-247

IXGH32N120A3

Manufacturer Part Number
IXGH32N120A3
Description
IGBT PT 1200V 75A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXGH32N120A3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.35V @ 15V, 32A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
32
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
1240
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXGH 32N120A3
IXGT 32N120A3
Fig. 19. Capacitance
10,000
f = 1 MHz
C ies
1,000
C oes
100
C res
10
0
5
10
15
20
25
30
35
40
V
- Volts
CE
Fig. 20. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.

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